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2DB1184Q
PNP SURFACE MOUNT TRANSISTOR
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Features
* * * * * * Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2)
Mechanical Data
* * * * * * * Case: TO252-3L Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish -- Matte Tin annealed over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.34 grams (approximate)
COLLECTOR
3 4 2 1
Pin Out Configuration
BASE
Top View
EMITTER
Device Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC ICM Value -60 -50 -5 -3 -4.5 Unit V V V A A
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current
Thermal Characteristics
Characteristic Power Dissipation @TA = 25C Thermal Resistance, Junction to Case Power Dissipation @TA = 25C (Note 3) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJC PD RJA TJ, TSTG Value 15 8.3 1.2 104 -55 to +150 Unit W C/W W C/W C
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 4) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product Output Capacitance
Notes: 1. 2. 3. 4.
@TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) VBE(SAT) hFE fT Cobo Min -60 -50 -5 120 Typ 110 26 Max -1 -1 -1 -1.2 270 Unit V V V A A V V MHz pF Test Condition IC = -50A, IE = 0 IC = -1mA, IB = 0 IE = -50A, IC = 0 VCB = -40V, IE = 0 VEB = - 4V, IC = 0 IC = -2A, IB = -0.2A IC = -1.5A, IB = -0.15A VCE = -3V, IC = -0.5A VCE = -5V, IC = -0.1A, f = 30MHz VCB = -10V, f = 1MHz
No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Device mounted on FR-4 PCB with minimum pad size recommended. Measured under pulsed conditions. Pulse width = 300s. Duty cycle 2%.
2DB1184Q
Document number: DS31504 Rev. 3 - 2
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August 2009
(c) Diodes Incorporated
2DB1184Q
1,000
400
VCE = -3V
350
-IC, COLLECTOR CURRENT (mA) 800
TA = 150C
hFE, DC CURRENT GAIN
IB = -5mA
300
TA = 125C
600
IB = -4mA
250 200
T A = 85C
IB = -3mA
400
IB = -2mA
TA = 25C
150 100
TA = -55C
200
IB = -1mA
50 0 0.001 0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 2 Typical DC Current Gain vs. Collector Current
1 10 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 1 Typical Collector Current vs. Collector-Emitter Voltage
0 0.1
0.4
IC/IB = 10
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
1.2
VCE = -3V
-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
1.0
0.3
0.8
TA = -55C
0.2
TA = 150C TA = 125C
0.6
TA = 25C
0.4
TA = 85C TA = 125C
0.1
T A = 85C TA = 25C T A = -55C
0.2
TA = 150C
0 0.001
0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current
0 0.001
0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 4 Typical Base-Emitter Turn-On Voltage vs. Collector Current
f = 1MHz
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
1.2
IC/IB = 10
1,000
1.0
0.8
T A = -55C TA = 25C
CAPACITANCE (pF)
Cibo
0.6
TA = 85C T A = 125C TA = 150C
100
0.4
Cobo
0.2 0 0.001
10 0.1
0.01 0.1 1 10 -IC, COLLECTOR CURRENT (A) Fig. 5 Typical Base-Emitter Saturation Voltage vs. Collector Current
1 10 100 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics
2DB1184Q
Document number: DS31504 Rev. 3 - 2
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August 2009
(c) Diodes Incorporated
2DB1184Q
140 fT, GAIN-BANDWIDTH PRODUCT (MHz) 120 100 80 60 40 20 0 20 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current 0 10 0.01 0.1 1 10 100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 8 Safe Operating Area (Note 3)
VCE = -5V f = 30MHz
10
Pw = 100s (mA)
IC, COLLECTOR CURRENT (A)
Pw = 100ms (mA)
1
Pw = 10ms (mA) Pw = 1ms (mA)
DC (mA)
0.1
TA = 25C Single Non-repetitive Pulse
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05 D = 0.9 RJA(t) = r(t) * RJA RJA = 110C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 T J - T A = P * R JA(t) Duty Cycle, D = t1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 10 t1, PULSE DURATION TIME (s) Fig. 9 Transient Thermal Response
100
1,000
10,000
Ordering Information
Part Number 2DB1184Q-13
Notes:
(Note 5) Case TO252-3L Packaging 2500/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
2DB1184Q = Product Type Marking Code = Manufacturers' code marking YYWW = Date Code Marking YY = Last Digit of Year, (ex: 08 = 2008) WW = Week Code 01-52
YYWW
2DB1184Q
2DB1184Q
Document number: DS31504 Rev. 3 - 2
3 of 5 www.diodes.com
August 2009
(c) Diodes Incorporated
2DB1184Q
Package Outline Dimensions
E b3
L3
D
b2 b
e
L4 A1 H A
a L SEATING PLANE C2
TO252-3L Dim Min Typ Max A 2.19 2.29 2.39 A1 0.97 1.07 1.17 b 0.64 0.76 0.88 b2 0.76 0.95 1.14 b3 5.21 5.33 5.50 C2 0.45 0.51 0.58 D 6.00 6.10 6.20 E 6.45 6.58 6.70 e 2.286 Typ. H 9.40 9.91 10.41 L 1.40 1.59 1.78 L3 0.88 1.08 1.27 L4 0.64 0.83 1.02 a 0 10 All Dimensions in mm
Suggested Pad Layout
X2
Y2 C Y1 Z
Dimensions Z X1 X2 Y1 Y2 C E1
Value (in mm) 11.6 1.5 7.0 2.5 7.0 6.9 2.3
X1
E1
2DB1184Q
Document number: DS31504 Rev. 3 - 2
4 of 5 www.diodes.com
August 2009
(c) Diodes Incorporated
2DB1184Q
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
2DB1184Q
Document number: DS31504 Rev. 3 - 2
5 of 5 www.diodes.com
August 2009
(c) Diodes Incorporated

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